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  1.  18
    Room temperature dislocation plasticity in silicon.A. M. Minor §, E. T. Lilleodden, M. Jin, E. A. Stach, D. C. Chrzan & J. W. Morris - 2005 - Philosophical Magazine 85 (2-3):323-330.
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  2.  14
    Using EELS to observe composition and electronic structure variations at dislocation cores in GaN.I. Arslan#, A. Bleloch, E. A. Stach, S. Ogut & N. D. Browning - 2006 - Philosophical Magazine 86 (29-31):4727-4746.
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  3.  23
    Size effects in the nanoindentation of silicon at ambient temperature.D. Ge, A. M. Minor, E. A. Stach & J. W. Morris - 2006 - Philosophical Magazine 86 (25-26):4069-4080.
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  4.  9
    The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts.F. M. Ross, C. -Y. Wen, S. Kodambaka, B. A. Wacaser, M. C. Reuter & E. A. Stach - 2010 - Philosophical Magazine 90 (20):2807-2816.
  5.  11
    The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts.F. M. Ross, C. -Y. Wen, S. Kodambaka, B. A. Wacaser, M. C. Reuter & E. A. Stach - 2010 - Philosophical Magazine 90 (35-36):4769-4778.